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2Gb: x16, x32 Mobile LPDDR2 SDRAM S4
Electrical Specifications
Electrical Specifications
Absolute Maximum Ratings
Stresses greater than those listed below may cause permanent damage to the device.
This is a stress rating only, and functional operation of the device at these or any other
conditions outside those indicated in the operational sections of this document is not
implied. Exposure to absolute maximum rating conditions for extended periods may
adversely affect reliability.
Table 54: Absolute Maximum DC Ratings
Parameter
V DD1 supply voltage relative to V SS
V DD2 supply voltage relative to V SS
V DDCA supply voltage relative to V SSCA
V DDQ supply voltage relative to V SSQ
Voltage on any ball relative to V SS
Storage temperature
Symbol
V DD1
V DD2 (1.2V)
V DDCA
V DDQ
V IN , V OUT
T STG
Min
–0.4
–0.4
–0.4
–0.4
–0.4
–55
Max
+2.3
+1.6
+1.6
+1.6
+1.6
+125
Unit
V
V
V
V
V
?C
Notes
1
1
1, 2
1, 3
4
Notes:
1.
2.
3.
4.
See 1. Voltage Ramp under Power-Up (page 40).
V REFCA 0.6 ≤ V DDCA ; however, V REFCA may be ≥ V DDCA provided that V REFCA ≤ 300mV.
V REFDQ 0.6 ≤ V DDQ ; however, V REFDQ may be ≥ V DDQ provided that V REFDQ ≤ 300mV.
Storage temperature is the case surface temperature on the center/top side of the de-
vice. For measurement conditions, refer to the JESD51-2 standard.
Input/Output Capacitance
Table 55: Input/Output Capacitance
Note 1 applies to all parameters and conditions
LPDDR2 1066-466
LPDDR2 400-200
Parameter
Input capacitance, CK and CK#
Input capacitance delta, CK and CK#
Input capacitance, all other input-
Symbol
C CK
C DCK
C I
MIN
1.0
0
1.0
MAX
2.0
0.20
2.0
MIN
1.0
0
1.0
MAX
2.0
0.25
2.0
Unit
pF
pF
pF
Notes
2, 3
2, 3, 4
2, 3, 5
only pins
Input capacitance delta, all other input-
C DI
–0.40
+0.40
–0.50
+0.50
pF
2, 3, 6
only pins
Input/output capacitance, DQ, DM, DQS,
C IO
1.25
2.5
1.25
2.5
pF
2, 3, 7, 8
DQS#
Input/output capacitance delta, DQS,
C DDQS
0
0.25
0
0.30
pF
2, 3, 8, 9
DQS#
Input/output capacitance delta, DQ, DM
Input/output capacitance ZQ
C DIO
C ZQ
–0.5
0
+0.5
2.5
–0.6
0
+0.6
2.5
pF
pF
2, 3, 8, 10
2, 3, 11
Notes:
1. T C –25?C to +105?C; V DDQ = 1.14–1.3V; V DDCA = 1.14–1.3V; V DD1 = 1.7–1.95V; V DD2 = 1.14–
1.3V.
PDF: 09005aef83f3f2eb
2gb_mobile_lpddr2_s4_g69a.pdf – Rev. N 3/12 EN
113
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2010 Micron Technology, Inc. All rights reserved.
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相关代理商/技术参数
MT42L256M32D4KP-MS
制造商:Micron Technology Inc 功能描述:256MX32 LPDDR2 PLASTIC IND TEMP GREEN WFBGA 1.2V - Bulk